The GE IC660ELB912G MicroGENI daughterboard is designed for high-performance industrial automation applications. It offers robust communication capabilities and efficient power management, making it an essential component for complex control systems.
Product Model:IC660ELB912G
Brand:GE
Power Requirement:5 Volts DC, 400 milliamps
Number of Supported Devices:30 per daughtercard
Communication Rate:38.4K, 76.8K, 153.6K standard, or 153.6K extended baud rates
Operating Voltage:220 (V)
Output Frequency:30 (kHz)
The GE IC660ELB912G MicroGENI daughterboard is a high-performance component designed for integration into Genius I/O systems, providing seamless communication capabilities in industrial environments.
This daughterboard supports up to 30 devices per daughtercard, ensuring scalability and flexibility for various control applications.
With a power requirement of 5 volts DC at 400 milliamps, the IC660ELB912G ensures reliable operation even under demanding conditions.
The communication rate can be set to 38.4K, 76.8K, 153.6K standard, or 153.6K extended baud rates, allowing for tailored performance to meet specific project requirements.
Built with precision engineering, the IC660ELB912G MicroGENI daughterboard offers durability and longevity, making it an ideal choice for critical industrial automation projects.
The GE IC660ELB912G MicroGENI daughterboard is designed for high-performance industrial automation applications. It offers robust communication capabilities and efficient power management, making it an essential component for complex control systems.